This resulted within a reduced work purpose and also the formation of a Schottky contact between the BrGO and n-type Si substrate. Because of the higher proportion of B-C and B-C3 bonding while in the BrGO/Si unit than that within the rGO/Si, the reduced Schottky barrier height of your BrGO/n-Si https://www.directivepublications.org/journal-of-applied-nanoscience/